PART |
Description |
Maker |
FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE High-Speed Switching Composite Diode Silicon Epitaxial Planar Type High-Speed Switching Composite Diode
|
ON Semiconductor SANYO SEMICONDUCTOR CO LTD SANYO[Sanyo Semicon Device]
|
RM50HG-12S RM50HG-12S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
BAV99 Q68000-A549 |
SILICON SWITCHING DIODE ARRAY (FOR HIGH-SPEED SWITCHING CONNECTED IN SERIES)
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
SMBD914 MMBD914 SMBD914/MMBD914 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
BAR74 Q62702-F704 |
From old datasheet system Silicon Switching Diode (For high-speed switching)
|
SIEMENS[Siemens Semiconductor Group]
|
SMBD7000 MMBD7000 SMBD7000/MMBD7000 |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
GDMBD2004 |
The GDMBD2004 is designed for ultra high speed switching SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD GTM CORPORATION
|
GBAV152 |
The GBAV152 is designed for ultra high speed switching application SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD GTM CORPORATION
|
SMBD7000 SMBD700007 MMBD7000 |
Silicon Switching Diode Array For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
BAW100 Q62702-A376 |
From old datasheet system Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)
|
Siemens Group Infineon SIEMENS[Siemens Semiconductor Group]
|